| 低缺陷密度和平整表面的硅基砷化镓外延 |
| |
| 引用本文： | 周旭亮,潘教青,梁仁荣,王敬,王圩.低缺陷密度和平整表面的硅基砷化镓外延[J].半导体学报,2014,35(7):073002-5. |
| |
| 作者姓名： | 周旭亮 潘教青 梁仁荣 王敬 王圩 |
| |
| 摘 要： | Device-quality GaAs thin films have been grown on miscut Ge-on-Si substrates by metal-organic chemical vapor deposition. A method of two-step epitaxy of GaAs is performed to achieve a high-quality top-layer. The initial thin buffer layer at 360 ℃ is critical for the suppression of anti-phase boundaries and threading dislocations. The etch pit density ofGaAs epilayers by KOH etching could reach 2.25 × 10^5 cm^-2 and high-quality GaAs top epilayers are observed by transmission electron microscopy. The band-to-band photoluminescence property of GaAs epilayers on different substrates is also investigated and negative band shifts of several to tens of meVs are found because of tensile strains in the GaAs epilayers. To achieve a smooth surface, a polishing process is performed, followed by a second epitaxy of GaAs. The root-mean-square roughness of the GaAs surface could be less than 1 nm, which is comparable with that of homo-epitaxial GaAs. These low-defect and smooth GaAs epilayers on Si are desirable for GaAs-based devices on silicon substrates.
|
| 关 键 词： | GaAs薄膜 光滑表面 Si衬底 缺陷密度 电子显微镜观察 腐蚀坑密度 化学汽相淀积 设备质量 |
Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate |
| |
| Zhou Xuliang,Pan Jiaoqing,Liang Renrong,Wang Jing and Wang Wei.Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate[J].Chinese Journal of Semiconductors,2014,35(7):073002-5. |
| |
| Authors: | Zhou Xuliang Pan Jiaoqing Liang Renrong Wang Jing and Wang Wei |
| |
| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
| Abstract: | surfaces metal-organic chemical vapor deposition photoluminescence Ⅲ-Ⅴ materials silicon |
| |
| Keywords: | surfaces metal-organic chemical vapor deposition photoluminescence Ⅲ-Ⅴ materials silicon |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
