首页 | 本学科首页   官方微博 | 高级检索  
     


fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm
Authors:Wang Qing  Ding Peng  Su Yongbo  Ding Wuchang  Muhammad Asif  Tang Wu  Jin Zhi
Affiliation:1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Department of Microwave IC,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;2. Department of Microwave IC,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;3. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
Abstract:
Keywords:high electron mobility transistor  InGaAs layer  semi-empirical model
本文献已被 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号