| 双MOS门极控制的EST的开关特性和安全工作区 |
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| 引用本文： | 张昌利,陈治明,闵源基,金相哲,朴钟文,金南均,金垠东.双MOS门极控制的EST的开关特性和安全工作区[J].半导体学报,2000,21(3):274-279. |
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| 作者姓名： | 张昌利 陈治明 闵源基 金相哲 朴钟文 金南均 金垠东 |
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| 作者单位： | 西安理工大学西安 710048,韩国电气研究所韩国 641-600 |
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| 摘 要： | 用二维 MEDICI商用器件模拟软件对双 MOS门极控制的发射极开关晶闸管 EST( Emitter Switched Thyristor)的正偏置安全工作区 FBSOA( Forward Biased Safe- Operation-Area)及其关断动态的电流分布进行了模拟研究 .证明该器件采用 P型转向器 ( diverter)与双MOS门极相结合的结构使得空穴电流分流从而显著地提高了 EST的开关能力 ,其 FBSOA也有明显展宽
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| 关 键 词： | 开关特性 安全工作区 双MOS门极控制EST |
| 文章编号： | 0253-4177(2000)03-0274-06 |
| 修稿时间： | 1999年1月28日 |
Switching Performance and Safe-Operation-Area for MOS Dual-Gated Emitter-Switched Thyristor |
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| ZHANG Chang\|li and CHEN Zhi\|ming.Switching Performance and Safe-Operation-Area for MOS Dual-Gated Emitter-Switched Thyristor[J].Chinese Journal of Semiconductors,2000,21(3):274-279. |
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| Authors: | ZHANG Chang\|li and CHEN Zhi\|ming |
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| Abstract: | The switching performance and Safe\|Operation\|Area (SOA) of MOS Dual\|Gated Emitter\|Switched Thyristor (EST) with a novel diverter (DGESTD) is simulated. This device has the function of shunt\|flowing of hole current by means of P\|type diverter and dual MOS\|gate control to obtain further performance improvements. The increased switching capability and wider Forward Biased SOA of the DGESTD compared to usual EST have been verified by the simulation results. |
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| Keywords: | Switching Performance SOA(Safe\|Operation\|Area) DGESTD |
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