| MOCVD生长的GaN 薄膜中缺陷团引起的X射线漫散射研究 |
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| 引用本文： | 马志芳,王玉田,江德生,赵德刚,张书明,朱建军,刘宗顺,孙宝娟,段瑞飞,杨辉,梁骏吾.MOCVD生长的GaN 薄膜中缺陷团引起的X射线漫散射研究[J].半导体学报,2008,29(7):1242-1245. |
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| 作者姓名： | 马志芳 王玉田 江德生 赵德刚 张书明 朱建军 刘宗顺 孙宝娟 段瑞飞 杨辉 梁骏吾 |
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| 作者单位： | 中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083;中国科学院半导体所 半导体照明研发中心,北京 100083;中国科学院半导体所 半导体照明研发中心,北京 100083;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083；中国科学院苏州纳米技术及纳米仿生研究所，苏州 215123;中国科学院半导体研究所 集成光电子国家重点实验室，北京 100083 |
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| 基金项目： | 国家自然科学基金;国家重点基础研究发展规划 |
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| 摘 要： | 采用高分辨X射线衍射对在蓝宝石(0001)面生长的GaN外延膜的漫散射进行了研究.结果表明,GaN薄膜中存在缺陷团,其浓度随着穿透位错密度的增加而增加,其平均半径呈相反趋势.基于位错是点缺陷的聚集区,缺陷团优先在位错附近形成的效应对结果进行了解释.同时发现电子迁移率随缺陷团浓度的增加而减少.
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| 关 键 词： | X射线漫散射 GaN 缺陷团 X-ray diffuse scattering GaN defect cluster |
| 文章编号： | 0253-4177(2008)07-1242-04 |
| 收稿时间： | 2/29/2008 9:40:12 AM |
| 修稿时间： | 2008年2月29日 |
Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD |
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| Ma Zhifang,Wang Yutian,Jiang Desheng,Zhao Degang,Zhang Shuming,Zhu Jianjun,Liu Zongshun,Sun Baojuan,Duan Ruifei,Yang Hui and Liang Junwu.Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J].Chinese Journal of Semiconductors,2008,29(7):1242-1245. |
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| Authors: | Ma Zhifang Wang Yutian Jiang Desheng Zhao Degang Zhang Shuming Zhu Jianjun Liu Zongshun Sun Baojuan Duan Ruifei Yang Hui and Liang Junwu |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate.The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases.Meanwhile,the mean radius of these defect clusters shows a reverse tendency.This result is explained by the effect of clusters preferentially forming around dislocations,which act as effective sinks for the segregation of point defects.The electric mobility is found to decrease as the cluster concentration increases. |
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| Keywords: | X-ray diffuse scattering GaN defect cluster |
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