| Active multi-mode-interferometer broadband superluminescent diodes |
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| 作者姓名： | 王飞飞 金鹏 吴巨 吴艳华 胡发杰 王占国 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (No. 61274072) and the National High Technology Research and Development Program of China (No. 2013AA014201). |
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| 摘 要： | We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi-mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode-interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μ m in theory, which is high enough for most tissue imaging.
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| 关 键 词： | quantum dot multi-mode-interferometer superluminescent diode |
| 收稿时间： | 2015/6/14 0:00:00 |
| 修稿时间： | 2015/8/18 0:00:00 |
Active multi-mode-interferometer broadband superluminescent diodes |
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| Wang Feifei,Jin Peng,Wu Ju,Wu Yanhua,Hu Fajie,Wang Zhanguo.Active multi-mode-interferometer broadband superluminescent diodes[J].Chinese Journal of Semiconductors,2016,37(1):014006-5. |
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| Authors: | Wang Feifei Jin Peng Wu Ju Wu Yanhua Hu Fajie Wang Zhanguo |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | |
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| Keywords: | quantum dot multi-mode-interferometer superluminescent diode |
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