| 氮化镓器件非线性特性表征 |
| |
| 引用本文： | 陈炽,郝跃,杨凌,全思,马晓华,张进程.氮化镓器件非线性特性表征[J].半导体学报,2010,31(11):114004-6. |
| |
| 作者姓名： | 陈炽 郝跃 杨凌 全思 马晓华 张进程 |
| |
| 摘 要： | 对100um和1mm碳化硅衬底的氮化镓器件进行直流特性，小信号特性和大信号特性的表征。100um和1mm器件小信号特性测试结果发现，随栅长增大，由于电容寄生效应的减小，电流截止频率fT增大。从数据看出，器件可用在C波段和X波段。大信号测试包括C波段和X波段负载牵引测试和功率扫描测试。器件偏置在AB类工作点，并且选定源端阻抗，做负载牵引测试。在负载牵引园图上，最大功率阻抗点和最佳效率阻抗点可以确定。根据5.5GHz的不同栅长的器件的功率扫描结果分析器件尺寸变换效应与和大尺寸器件的自热效应密切相关。8GHz 不同漏极偏置的器件的功率扫描结果说明碳化硅衬底的氮化镓器件有好的热导率，高击穿电压和10.16W/mm 功率密度。从分析可证明碳化硅衬底的氮化镓器件是放大器设计的理想材料。
|
| 关 键 词： | HEMT器件 GaN 非线性特性 扫描测量 输出功率 周边设备 栅极电压 放大器设计 |
| 修稿时间： | 6/29/2010 3:56:03 PM |
Nonlinear characterization of GaN HEMT |
| |
| Chen Chi,Hao Yue,Yang Ling,Quan Si,Ma Xiaohua and Zhang Jincheng.Nonlinear characterization of GaN HEMT[J].Chinese Journal of Semiconductors,2010,31(11):114004-6. |
| |
| Authors: | Chen Chi Hao Yue Yang Ling Quan Si Ma Xiaohua and Zhang Jincheng |
| |
| Affiliation: | National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
| |
| Abstract: | |
| |
| Keywords: | GaN HEMT Load-pull characterization Optimum load impedance Power sweep measurement |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
