A long lifetime, low error rate RRAM design with self-repair module |
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Authors: | You Zhiqiang Hu Fei Huang Liming Liu Peng Kuang Jishun Li Shiying |
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Affiliation: | Key Laboratory for Embedded and Network Computing of Hunan Province, College of Computer Science and Electronic Engineering, Hunan University, Changsha 410082, China |
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Abstract: | Resistive random access memory (RRAM) is one of the promising candidates for future universal memory. However, it suffers from serious error rate and endurance problems. Therefore, exploring a technical solution is greatly demanded to enhance endurance and reduce error rate. In this paper, we propose a reliable RRAM architecture that includes two reliability modules: error correction code (ECC) and self-repair modules. The ECC module is used to detect errors and decrease error rate. The self-repair module, which is proposed for the first time for RRAM, can get the information of error bits and repair wear-out cells by a repair voltage. Simulation results show that the proposed architecture can achieve lowest error rate and longest lifetime compared to previous reliable designs. |
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Keywords: | self-repair ECC RRAM memristor |
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