| 量子阱混杂单片集成宽可调谐激光器与半导体光放大器 |
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| 引用本文： | 刘泓波,赵玲娟,阚强,潘教青,王路,朱洪亮,周帆,王圩.量子阱混杂单片集成宽可调谐激光器与半导体光放大器[J].半导体学报,2008,29(9):1657-1660. |
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| 作者姓名： | 刘泓波 赵玲娟 阚强 潘教青 王路 朱洪亮 周帆 王圩 |
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| 作者单位： | 中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083;中国科学院半导体研究所 半导体材料科学重点实验室,北京 100083 |
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| 摘 要： | 采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次.该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上.
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| 关 键 词： | 可调谐激光器 半导体光放大器 离子注入 量子阱混杂 |
| 收稿时间： | 4/1/2008 10:53:43 AM |
Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing |
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| Liu Hongbo,Zhao Lingjuan,Kan Qiang,Pan Jiaoqing,Wang Lu,Zhu Hongliang,Zhou Fan and Wang Wei.Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing[J].Chinese Journal of Semiconductors,2008,29(9):1657-1660. |
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| Authors: | Liu Hongbo Zhao Lingjuan Kan Qiang Pan Jiaoqing Wang Lu Zhu Hongliang Zhou Fan and Wang Wei |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in mainland China.The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA.The device can work at available channels with SMSR over 35dB. |
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| Keywords: | tunable laser semiconductor-optical-amplifier ion implantation quantum-well intermixing |
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