| 非对称异质双栅应变硅MOSFETs 二维模型研究 |
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| 引用本文： | 李劲,刘红侠,袁博,曹磊,李斌.非对称异质双栅应变硅MOSFETs 二维模型研究[J].半导体学报,2011,32(4):044005-7. |
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| 作者姓名： | 李劲 刘红侠 袁博 曹磊 李斌 |
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| 作者单位： | 西安电子科技大学 |
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| 摘 要： | 基于对二维泊松方程的精确求解，本文对全耗尽型非对称异质双栅应变硅MOSFET的二维表面势，表面电场，阈值电压进行了研究。模型结果和二维数值模拟器的结果很吻合。此外并对该器件的物理作了深入的研究。该模型对设计全耗尽型非对称异质双栅应变硅MOSFET器件有着重要的指导作用.
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| 关 键 词： | MOSFET 解析模型 二维分析 非对称 全耗尽 应变硅 双栅 料门 |
| 收稿时间： | 2010/9/26 0:00:00 |
| 修稿时间： | 11/5/2010 1:14:39 PM |
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs |
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| Li Jin,Liu Hongxi,Yuan Bo,Cao Lei and Li Bin.A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs[J].Chinese Journal of Semiconductors,2011,32(4):044005-7. |
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| Authors: | Li Jin Liu Hongxi Yuan Bo Cao Lei and Li Bin |
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| Affiliation: | [1]Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics,Xidian University, Xi＇an 710071, China [2]School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China |
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| Abstract: | On the basis of the exact resultant solution of two dimensional Poisson's equations, a new accurate two-dimensional analytical model comprising surface channel potentials, a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator. Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs. |
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| Keywords: | dual material gate double-gate MOSFET strained-Si short-channel effect the drain-induced barrier-lowering |
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