| 一种用于RFID读写器的高集成CMOS功率放大器的设计与分析 |
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| 引用本文： | 高同强,张春,池保勇,王志华.一种用于RFID读写器的高集成CMOS功率放大器的设计与分析[J].半导体学报,2009,30(6):065008-5. |
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| 作者姓名： | 高同强 张春 池保勇 王志华 |
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| 作者单位： | Department;Electronics;Tsinghua;University;Institute;Microelectronics; |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | To implement a fully-integrated on-chip CMOS power amplifier（PA） for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as the output-stage inductor.Compared with the on-chip inductors in a CMOS process,the merit of the bondwire inductor is its high quality factor,leading to a higher output power and efficiency.The disadvantage of the bondwire inductor is that it is hard to control.A highly integrated class-E PA is implemented with 0.18-μm CMOS process.It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm.The maximum power-added efficiency（PAE） is 32.1%.Also,the spectral performance of the PA is analyzed for the specified RFID protocol.
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| 关 键 词： | CMOS功率放大器 RFID 高度集成 设计 阅读器 最大输出功率 E类功率放大器 CMOS工艺 |
| 收稿时间： | 8/29/2008 5:22:30 PM |
Design and analysis of a highly-integrated CMOS power amplifier for RFID readers |
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| Gao Tongqiang,Zhang Chun,Chi Baoyong and Wang Zhihua.Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J].Chinese Journal of Semiconductors,2009,30(6):065008-5. |
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| Authors: | Gao Tongqiang Zhang Chun Chi Baoyong and Wang Zhihua |
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| Affiliation: | Department of Electronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China;Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | To implement a fully-integrated on-chip CMOS power amplifier(PA) for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as the output-stage inductor.Compared with the on-chip inductors in a CMOS process,the merit of the bondwire inductor is its high quality factor,leading to a higher output power and efficiency.The disadvantage of the bondwire inductor is that it is hard to control.A highly integrated class-E PA is ... |
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| Keywords: | CMOS power amplifier RFID reader matching network bonding wires |
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