| 磁控溅射制备Ga2O3/ITO深紫外透明导电膜的光电性能 |
| |
| 引用本文： | 刘建军,闫金良,石亮,李厅. 磁控溅射制备Ga2O3/ITO深紫外透明导电膜的光电性能[J]. 半导体学报, 2010, 31(10): 103001-5 |
| |
| 作者姓名： | 刘建军 闫金良 石亮 李厅 |
| |
| 摘 要： | 采用磁控溅射方法在石英玻璃基底上制备了Ga2O3/ITO膜，用紫外-可见分光光度计、四探针测试仪对ITO膜和 Ga2O3/ITO膜的光学透过率和面电阻进行了表征，详细研究了ITO层和Ga2O3层的厚度对Ga2O3/ITO双层膜光电性能的影响。研究表明，Ga2O3(50nm) /ITO(23nm)膜在280nm处的深紫外光学透过率高达77.6%，面电阻为323Ω/sq；ITO层控制Ga2O3/ITO膜的面电阻，影响Ga2O3/ITO膜的紫外透过率；Ga2O3层厚度调控Ga2O3/ITO膜的紫外区域的光谱形状。
|
| 关 键 词： | ITO薄膜 Ga2O3 紫外线透过率 磁控溅射 光电性能 透明导电 紫外线透射率 分光光度计 |
| 收稿时间： | 2010-04-20 |
| 修稿时间： | 2010-05-28 |
Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering |
| |
| Liu Jianjun,Yan Jinliang,Shi Liang and Li Ting. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering[J]. Chinese Journal of Semiconductors, 2010, 31(10): 103001-5 |
| |
| Authors: | Liu Jianjun Yan Jinliang Shi Liang Li Ting |
| |
| Affiliation: | School of Physics, Ludong University, Yantai 264025, China;School of Physics, Ludong University, Yantai 264025, China;School of Physics, Ludong University, Yantai 264025, China;School of Physics, Ludong University, Yantai 264025, China |
| |
| Abstract: | |
| |
| Keywords: | transparent conductive film deep ultraviolet gallium oxide indium tin oxide |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
