源区浅结SOI MOSFET的辐照效应模拟

研究了源区浅结的不对称SOIMOSFET对浮体效应的改善 ,模拟了总剂量、抗单粒子事件 (SEU)、瞬时辐照效应以及源区深度对抗辐照性能的影响 .这种结构器件的背沟道抗总剂量能力比传统器件有显著提高 ,并且随着源区深度的减小 ,抗总剂量辐照的能力不断加强 .体接触不对称结构的抗SEU和瞬时辐照能力优于无体接触结构和传统结构器件 ,这与体接触对浮体效应的抑制和寄生npn双极晶体管电流增益的下降有关

Radiation of SOI MOSFET with Shallow Source

The floating body effect of an asymmetric SOI MOSFET is studied.The total dose,SEU,and dose rate radiation effect of asymmetric SOI MOSFET with shallow source are simulated.The total dose radiation tolerance of its back channel can increase two order of magnitude more than its conventional counterpart.The total dose hardness is improved with the decrease of source depth.The SEU and dose rate hardness of asymmetric structure with body tie is better than that without body tie and conventional structure because of the suppress of floating body effect and the decrease of parasitic npn bipolar transistor.