用模拟退火算法从S参数提取HFET小信号等效电路模型参数

微波集成电路和微波器件的设计需要准确地提取 HFET的小信号等效电路模型参数 .采用带回火的模拟退火算法从 S参数提取 HFET小信号等效电路模型参数 ,得到了高质量的解 .计算结果是全局最优解 ,摆脱了初始值的影响 ,并且克服了局部优化算法遇到的不收敛或收敛到错误解的问题 .利用测量得到的栅电阻 ,计算结果的精度可以进一步提高 .这个算法同样也适用于 HBT、电容和电感等器件模型参数的提取

HFET Small Signal Model Extraction from S Parameters Using Simulated Annealing Algorithm

In the design of microwave devices and integrated circuits,it is very im portant to extract the HFET small signal equalized circuit m odel accurately.The solution of HFET model extraction with high quality using the simulated annealing al- gorithm is obtained.The solution is the global optim um without any influence of the initial value on it.What's m ore,the method avoids the non- unique solution occuring frequently when the local optim um algorithm is used.Provided that the value of gate resistance is acquired from measurement,the precision of the solution can be improved further.The m ethod can also be used to extract the m odel param eters of HBT,capacitor and inductor.