| 金刚石 MISFET 器件的研究 |
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| 引用本文： | 周建军,柏松,孔岑,耿习娇,陆海燕,孔月婵,陈堂胜.金刚石 MISFET 器件的研究[J].半导体学报,2013,34(3):034006-3. |
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| 作者姓名： | 周建军 柏松 孔岑 耿习娇 陆海燕 孔月婵 陈堂胜 |
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| 作者单位： | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute |
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| 摘 要： | Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor（MISFET） was fabricated.The gate dielectric Al2O3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 V.The DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 V.With the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.
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| 关 键 词： | diamond MISFET Al2O3 |
| 收稿时间： | 8/5/2012 9:39:28 PM |
| 修稿时间： | 10/6/2012 4:05:29 AM |
Research on the diamond MISFET |
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| Zhou Jianjun,Bai Song,Kong Cen,Geng Xijiao,Lu Haiyan,Kong Yuechan and Chen Tangsheng.Research on the diamond MISFET[J].Chinese Journal of Semiconductors,2013,34(3):034006-3. |
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| Authors: | Zhou Jianjun Bai Song Kong Cen Geng Xijiao Lu Haiyan Kong Yuechan and Chen Tangsheng |
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| Affiliation: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | |
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| Keywords: | diamond MISFET Al2O3 |
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