钝化边的制作及其对不同尺寸自对准InGaP/GaAs HBT性能的影响

采用全耗尽的In Ga P材料在基区Ga As表面形成钝化边(passivation ledge)的方法,研制出了带钝化边的自对准In Ga P/Ga As异质结双极晶体管(HBT) .通过对不同尺寸、有无钝化边器件性能的比较得出:钝化边对提高小尺寸器件的直流增益有明显效果,对器件的高频特性无明显影响.此外,钝化边的形成改善了所有实验器件的长期可靠性.

Passivation Ledge Fabrication and Its Effect on Performance of Self-Aligned InGaP/GaAs HBT with Variety of Emitter Sizes

The self-aligned InGaP/GaAs heterojunction bipolar transistors (HBTs) with passivation ledge are fabricated.The performances of the HBTs with and without passivation ledge are compared.The results show that they have the same high-frequency performance both for the devices without passivation ledge and for the devices with passivation ledge.But the improvement of the current gain is different for the devices with different emitter sizes.The devices with smaller size of emitter are more sensitive to the passivation ledge.Moreover,the reliability of all devices with the passivation ledge is improved.