| 非掺杂对称双栅的基于完整表面电势的核心模型 |
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| 引用本文： | 何进,张立宁,张健,傅越,郑睿,张兴.非掺杂对称双栅的基于完整表面电势的核心模型[J].半导体学报,2008,29(11):2092-2097. |
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| 作者姓名： | 何进 张立宁 张健 傅越 郑睿 张兴 |
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| 作者单位： | 北京大学深圳研究生院 集成微系统重点试验室，深圳 518055；北京大学信息科学技术学院，北京 100871;北京大学信息科学技术学院，北京 100871;北京大学信息科学技术学院，北京 100871;北京大学信息科学技术学院，北京 100871;北京大学信息科学技术学院，北京 100871;北京大学深圳研究生院 集成微系统重点试验室，深圳 518055；北京大学信息科学技术学院，北京 100871 |
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| 摘 要： | 通过求解Poisson方程自洽地得到了表面电势随沟道电压的变化关系，从而推出了非掺杂对称双栅MOSFET的一个基于表面势的模型. 通过Pao-Sah积分得到了漏电流的表达式. 该模型由一组表面势方程组成，解析形式的漏电流可以通过源端和漏端的电势得到. 结果标明该模型在双栅MOSFET的所有工作区域都成立，而且不需要任何简化(如应用薄层电荷近似)和辅助拟合函数. 对不同工作条件和不同尺寸器件的二维数值模拟与模型的比较进一步验证了提出模型的精度.
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| 关 键 词： | 体MOSFET极限 非传统CMOS 双栅MOSFET 器件物理 表面势模型 |
| 收稿时间： | 5/20/2008 5:01:09 PM |
| 修稿时间： | 6/29/2008 8:32:03 PM |
A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs |
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| He Jin,Zhang Lining,Zhang Jian,Fu Yue,Zheng Rui and Zhang Xing.A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs[J].Chinese Journal of Semiconductors,2008,29(11):2092-2097. |
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| Authors: | He Jin Zhang Lining Zhang Jian Fu Yue Zheng Rui and Zhang Xing |
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| Affiliation: | Key Laboratory of Integrated Microsystems,Shenzhen Graduate School,Peking University,Shenzhen 518055,China; School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;Key Laboratory of Integrated Microsystems,Shenzhen Graduate School,Peking University,Shenzhen 518055,China; School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China |
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| Abstract: | A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson's equation to obtain the relationship betwe en the surface potential and voltage in the channel region in a self-consistent way.The drain current expression is then obtained from Pao-Sah's double integra l.The model consists of one set of surface potential equations,and the analytic drain current can be evaluated from the surface potential at the source and drain ends.It is demonstrated that the model is ... |
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| Keywords: | bulk MOSFET limit non-classical CMOS double-gate MOSFET device physics surface potential-based model |
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