| Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys |
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| 作者姓名： | Tan P H Luo X D Ge W K Xu Z Y Zhang Y Mascarenhas A Xin H P Tu C W |
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| 作者单位： | 中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;香港科技大学物理系，香港;南通大学理学院 江苏省光用集成电路设计重点实验室，南通 226007;香港科技大学物理系，香港;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;National Renewable Energy Laboratory, Golden, Colorado 80401, USA;National Renewable Energy Laboratory, Golden, Colorado 80401, USA;Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093,USA;Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093,USA |
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| 基金项目： | 中国科学院资助项目
,
科技部科研项目
,
江苏省自然科学基金
,
新世纪优秀人才支持计划
,
美国ODE基金 |
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| 摘 要： | 利用显微光致发光技术,观测到了N含量为0.1%,0.22%,0.36%和0.62%的GaAsN合金的E0,E0 △0和E 能级的光致发光峰.共振喇曼散射谱进一步证实了这些发光峰来源于所研究材料的本征能级,而不是来源于GaAsN合金中的一些局域激子发射.随着N组分的增加,E0 △0和E 能级分别向低能和高能方向移动并在N组分为0.16%时发生交错.文中提出了一种少量等电子掺杂和显微光致发光谱相结合的方法来直接观测半导体材料带边以上的跃迁能级,尽管光致发光谱通常没有用来观测这些能级位置.
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| 关 键 词： | GaAsN 共振喇曼散射 光致发光 带隙 等电子掺杂 GaAsN resonant Raman scattering photoluminescence bandgap isoelectronic doping 含量 GaAsN 导体材料 共振喇曼散射 带边 发光光谱 Alloys Levels Bandgap Above Emissions Photoluminescence Raman Scattering small combined direct observation above band gap photoluminescence |
| 文章编号： | 0253-4177(2006)03-0397-06 |
| 收稿时间： | 11 7 2005 12:00AM |
| 修稿时间： | 2005年11月7日 |
Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys |
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| Tan P H,Luo X D,Ge W K,Xu Z Y,Zhang Y,Mascarenhas A,Xin H P,Tu C W.Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys[J].Chinese Journal of Semiconductors,2006,27(3):397-402. |
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| Authors: | Tan P H Luo X D Ge W K Xu Z Y Zhang Y Mascarenhas A Xin H P and Tu C W |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Department of Physics,Hong Kong University of Science and Technology,Hong Kong, China;Jiangsu Provincial Key Laboratory of ASIC Design, Nantong University, Nantong 226007, China;Department of Physics,Hong Kong University of Science and Technology,Hong Kong, China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Renewable Energy Laboratory,Golden,Colorado 80401,USA;National Renewable Energy Laboratory,Golden,Colorado 80401,USA;Department of Electrical and Computer Engineering,University of California at San Diego,La Jolla,California 92093,USA;Department of Electrical and Computer Engineering,University of California at San Diego,La Jolla,California 92093,USA |
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| Abstract: | |
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| Keywords: | GaAsN resonant Raman scattering photoluminescence bandgap isoelectronic doping |
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