首页 | 本学科首页   官方微博 | 高级检索  
     

功率为16.9 dBm增益大于20 dB的InP DHBT W波段功率放大器
引用本文:姚鸿飞,曹玉雄,吴旦昱,宁晓曦,苏永波,金智.功率为16.9 dBm增益大于20 dB的InP DHBT W波段功率放大器[J].半导体学报,2013,34(7):075005-7.
作者姓名:姚鸿飞  曹玉雄  吴旦昱  宁晓曦  苏永波  金智
作者单位:Institute of Microelectronics,Chinese Academy of Sciences
基金项目:国家重点基础研究发展计划(973计划)
摘    要:A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor(DHBT).The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm~2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.

关 键 词:power  amplifier  W-band  DHBT  InP

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain
Yao Hongfei,Cao Yuxiong,Wu Danyu,Ning Xiaoxi,Su Yongbo and Jin Zhi.A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain[J].Chinese Journal of Semiconductors,2013,34(7):075005-7.
Authors:Yao Hongfei  Cao Yuxiong  Wu Danyu  Ning Xiaoxi  Su Yongbo and Jin Zhi
Affiliation:Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract:
Keywords:power amplifier  W-band  DHBT  InP
本文献已被 CNKI 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号