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High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers |
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| Affiliation: | 1. Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China 2. Beijing Optoelectronics Technology Laboratory and Department of Electronic Engineering,Beijing Polytechnique University, Beijing 100022, China |
| Abstract: | High efficiency Al-free InGaAs/InGaAsP/InGaP lasers emitting at 980nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95 % and a low internal loss of 1.8 cm-1. Low threshold current density of 190A/cm2 and high slope efficiency of 1.06W/A are obtained by lasers with 800μm cavitylength. A high characteristic temperature 210C is also obtained by replacing the GaAs barrier with high-bandgap InGaAsP barrier. The measured vertical and parallel divergence angle are 40° and 8°, respectively. |
| Keywords: | quantum well laser high efficiency Al-free PACC: 4255P 6855 7856 8115HCLC number: TN248 4 Document code: A Article ID: 0253-4177(2000)05-0417-04 |
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