| MIC薄膜多晶硅材料的动态镍吸除技术基本机理及其应用 |
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| 引用本文： | 李阳,孟志国,吴春亚,王文,郭海成,张芳,熊绍珍.MIC薄膜多晶硅材料的动态镍吸除技术基本机理及其应用[J].半导体学报,2007,28(10):1574-1579. |
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| 作者姓名： | 李阳 孟志国 吴春亚 王文 郭海成 张芳 熊绍珍 |
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| 作者单位： | 南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071;南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071;南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071;香港科技大学电机与电子工程系，香港;香港科技大学电机与电子工程系，香港;科技部高技术研究发展中心，北京 100044;南开大学光电子所，天津市光电子薄膜器件与技术重点实验室，天津 300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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国家自然科学基金 |
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| 摘 要： | 首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程,然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用.在研究金属诱导晶化多晶硅材料(MIC poly-Si)和以之为有源层的poly-Si TFT的过程中,发现在MIC多晶硅薄膜中含有部分残余的镍成份.而大部分存在于对撞晶界的残余镍成份会造成大量的缺陷,这将导致TFT器件性能乃至整个系统的稳定性和可靠性的降低.为了改善MIC薄膜及器件质量,我们采用磷硅玻璃(PSG)动态镍吸杂技术,有效地吸除镍,降低多晶硅中镍的残留量,改善对撞晶界的缺陷密度,降低用之制备TFT的漏电流.该技术工艺过程简单,处理成本低,适合于大批量的工业化生产,有望成为制备高稳定性微电子器件与电路系统的必需工艺技术.
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| 关 键 词： | 金属诱导晶化多晶硅 磷硅玻璃 动态镍吸除 固溶度 多晶硅薄膜 硅材料 动态 吸除 机理 应用 Applications Technology Dynamic Thin Film Material Mechanism 工艺技术 电路系统 微电子器件 高稳定性 工业化生产 大批量 处理成本 漏电流 缺陷密度 |
| 文章编号： | 0253-4177（2007）10-1574-06 |
| 修稿时间： | 2007-04-10 |
Basis Mechanism of MIC Poly-Si Thin Film Material Dynamic Gettered Technology and Its Applications |
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| Li Yang,Meng Zhiguo,Wu Chuny,Wong M,Kwok H S,Zhang Fang and Xiong Shaozhen.Basis Mechanism of MIC Poly-Si Thin Film Material Dynamic Gettered Technology and Its Applications[J].Chinese Journal of Semiconductors,2007,28(10):1574-1579. |
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| Authors: | Li Yang Meng Zhiguo Wu Chuny Wong M Kwok H S Zhang Fang and Xiong Shaozhen |
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| Affiliation: | Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China;Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Hong Kong,China;Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Hong Kong,China;Center of R & D for High Technology,MOS,Beijing 100044,China;Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Institute of Photo-Electronics,Nankai University,Tianjin 300071,China |
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| Abstract: | The basis mechanism and main process flow of metal induced crystallization poly-Si (MIC poly-Si) dynamic gettering are discussed,and its applications are studied for use in poly-Si thin film transistor devices.In the research of MIC poly-Si and producing TFT with poly-Si as the active layer,we find that nickel residue is left in the MIC poly-Si thin film,and the amount of nickel is extremely high along the grain boundary.This can reduce the stability and reliability of the TFT as well as the whole system.In order to improve the performance of MIC thin films and devices,we use dynamic nickel gettering by phosphor-silicate glass (PSG) to absorb nickel effectively,reducing the residual nickel in the poly-Si,reducing the number of defects at the conflicting crystal boundaries,and decreasing the leakage current of the TFT.The simple process flow and low cost make it suitable for industrial manufacturing.This is a necessary step in the production of microelectronics devices and systems. |
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| Keywords: | MIC poly-Si PSG dynamic Ni gettering solid solubility |
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