| 高温退火处理提高半绝缘VGF-GaAs单晶的电学性能 |
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| 引用本文： | 占荣,赵有文,于会永,高永亮,惠峰.高温退火处理提高半绝缘VGF-GaAs单晶的电学性能[J].半导体学报,2008,29(9):1770-1774. |
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| 作者姓名： | 占荣 赵有文 于会永 高永亮 惠峰 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 垂直梯度凝固法(VGF)生长的低位错半绝缘（SI) GaAs单晶存在电阻率和迁移率低、电学补偿度小、均匀性差等问题. 在3种不同温度条件下，对VGF-SI-GaAs晶片进行了加As压的闭管退火处理. 结果表明，经过1160℃/12h的高温退火处理后，VGF-SI-GaAs单晶的电阻率、迁移率和均匀性均得到了显著提高. 利用Hall、热激电流谱（TSC) 、红外吸收法分别测试分析了原生和退火VGF-SI-GaAs单晶样品的电学性质、深能级缺陷、EL2浓度和C浓度，并与常规液封直拉法（LEC) SI-GaAs单晶样品进行了比较. 原生VGF-SI-GaAs单晶中的EL2浓度明显低于LEC-SI-GaAs单晶，经过退火处理后其EL2浓度显著增加，电学补偿增强，而且能级较浅的一些缺陷的浓度降低，因而有效提高了其电学性能.
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| 关 键 词： | 垂直梯度凝固法 半绝缘砷化镓 电学补偿 缺陷 |
| 收稿时间： | 2/29/2008 9:58:54 AM |
| 修稿时间： | 5/13/2008 9:46:28 AM |
Through High Temperature Annealing |
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| Zhan Rong,Zhao Youwen,Yu Huiyong,Gao Yongliang and Hui Feng.Through High Temperature Annealing[J].Chinese Journal of Semiconductors,2008,29(9):1770-1774. |
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| Authors: | Zhan Rong Zhao Youwen Yu Huiyong Gao Yongliang and Hui Feng |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Semi-insulating(SI)GaAs single crystals with low dislocation density are grown by the vertical gradient freezing(VGF)method.The as-grown VGF-SI-GaAs exhibits low resistivity,low mobility,weak electrical compensation,and poor uniformity.SI-GaAs wafers sliced from the single crystal ingots are annealed at three different temperatures in a sealed quartz tube with controlled arsenic pressure.The results indicate that resistivity and carrier mobility of the VGF-SI-GaAs are enhanced significantly after annealing ... |
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| Keywords: | VGF SI-GaAs electrical compensation defect |
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