超深亚微米集成电路中的互连问题--低k介质与Cu的互连集成技术

半导体集成电路技术的发展对互连技术提出了新的需求,互连集成技术在近期和远期发展中将面临一系列技术和物理限制的挑战,其中Cu互连技术的发明是半导体集成电路技术领域中具有革命性的技术进展之一,也是互连集成技术的解决方案之一.在对互连集成技术中面临的技术与物理挑战的特点和可能的解决途径概括性介绍的基础上,重点介绍和评述了低k介质和Cu的互连集成技术及其所面临关键的技术问题,同时还对三维集成互连技术、RF互连技术和光互连技术等Cu互连集成技术之后的可能的新一代互连集成技术和未来互连技术的发展趋势给予了评述和展望.

Development of ULSI Interconnect Integration Technology--Copper Interconnect with Low k Dielectrics

Invention and application of low k /Cu interconnect integration technology is a revolutionary advance in integrated circuits (IC) industry and technology.Now low k /Cu interconnect integration technology has become one of most important key technologies in IC industry.In this paper,the trend of IC technology and the requirements for interconnect technology,the challenges of interconnect technology development,and the potential solutions to the challenge are review firstly.Then the dual Damascene Cu interconnect integration technology and the technology challenges are introduced.The key issues of the dual Damascene Cu interconnect integration technology are described and reviewed.Finally,the trend of the beyond Cu interconnect integration technology and potential interconnect technology are prospected.