| Znse/GaAs超晶格的电子态和芯态激子 |
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| 引用本文： | 傅柔励,沈丁立.Znse/GaAs超晶格的电子态和芯态激子[J].半导体学报,1989,10(5):356-361. |
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| 作者姓名： | 傅柔励 沈丁立 |
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| 作者单位： | 中国科学院上海技术物理研究所，复旦大学物理系 上海 |
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| 摘 要： | 本文用半经验紧束缚法计算了ZnSe/GaAs(001)超晶格的能带结构,研究了其能隙与有效质量随层厚的变化.计算了(ZnSe)_5/(GaAs)_5超晶格中与杂质有关的芯态激子,其结果能说明相应异质结中束缚在Ga上的激子峰.本文还提出了该材料中导带底存在界面态.
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| 关 键 词： | 超晶格 能带结构 芯态激子 硒化锌 |
Electronic States and the Core Exciton of Superlattice ZnSe/GaAs |
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| Fu Rouli/.Electronic States and the Core Exciton of Superlattice ZnSe/GaAs[J].Chinese Journal of Semiconductors,1989,10(5):356-361. |
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| Authors: | Fu Rouli/ |
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| Affiliation: | Fu Rouli/Shanghai Institute of Technical Physics,Academia SinicaShen Dingli/Physics Department,Fudan University,Shanghai |
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| Abstract: | The energy band-structures of superlattice ZnSe/GaAs (001) are calculated using semiem-pirical tight-binding method.The fundamental gap and effective mass are studied with thevariation of layer thickness.The core excitons related to impurity B, Al and Ga are obtainedin (ZnSe)_5/(GaAs)_5, some results of which are accountable for Ca-bound exciton peak observedin corresponding heterojunction experiment,it is proposed that interface states would exist inthis material. |
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| Keywords: | ZnSe/GaAs Superlattice Fundamental gap Energy band structures Interface states Effective mass Core exciton |
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