粗调和细调相结合的标准CMOS低噪声环形压控振荡器

本文提出了一种基于65nm CMOS标准工艺、采用粗调和细调相结合的低噪声环形压控振荡器。论文分析了环形振荡器中的直接频率调制机理，并采用开关电容阵列来减小环形压控振荡器的增益从而抑制直接频率调制效应。开关电容采用电容密度较高的二维叠层MOM电容使该压控振荡器与标准的CMOS工艺兼容。所设计压控振荡器的频率范围为480MHz～1100MHz，调谐范围为78%，测试得到输出频率为495MHz时的相位噪声为-120dBc/Hz@1MHz。该压控振荡器在1.2V的偏压下的功耗为3.84mW，相应的优值(FOM)为-169dBc/Hz。

A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

A low phase noise wideband ring oscillator with coarse and fine tuning techniques implemented in standard 65nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and switched capacitor array is introduced for lower VCO-gain to suppress this effect. Two-dimensional stacked MOM-capacitor with high density was adopted as switched capacitor to make the proposed ring VCO compatible with standard CMOS process. The designed ring VCO exhibits output frequency from 480MHz to 1100MHz, resulting a tuning range of 78%, and the measured phase noise is -120dBc/Hz@1MHz at 495MHz output. The VCO core consumes 3.84mW under 1.2V supply voltage, the corresponding FOM is -169dBc/Hz.