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低欧姆接触MOCVD生长的AlN/GaN HEMT
作者姓名:Gu Guodong  Dun Shaobo  Han Tingting  Xu Peng  Yin Jiayun  Feng Zhihong
作者单位:Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute
摘    要:AlN/GaN high-electron-mobility transistors(HEMTs)on SiC substrates were fabricated by metalorganic chemical vapor deposition(MOCVD)and then characterized.An Si/Ti/Al/Ni/Au stack was used to reduce ohmiccontactresistance(0.33 mm)atalowannealingtemperature.Thefabricateddevicesexhibitedamaximum drain current density of 1.07 A/mm(VGS D1 V)and a maximum peak extrinsic transconductance of 340 mS/mm.The off-state breakdown voltage of the device was 64 V with a gate–drain distance of 1.9 m.The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 36 and 80 GHz with a 0.25 m gate length,respectively.

关 键 词:AlN/GaN  HEMT  ohmic  contact  SiC  substrate  MOCVD

Low ohmic contact AlN/GaN HEMTs grown by MOCVD
Gu Guodong,Dun Shaobo,Han Tingting,Xu Peng,Yin Jiayun,Feng Zhihong.Low ohmic contact AlN/GaN HEMTs grown by MOCVD[J].Chinese Journal of Semiconductors,2013,34(11):114004-3.
Authors:Gu Guodong  Dun Shaobo  Han Tingting  Xu Peng  Yin Jiayun and Feng Zhihong
Affiliation:Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Abstract:
Keywords:AlN/GaN HEMT  ohmic contact  SiC substrate  MOCVD
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