| 一种粒子探测器的CMOS读出电路设计 |
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| 引用本文： | 张雅聪,陈中建,鲁文高,赵宝瑛,吉利久.一种粒子探测器的CMOS读出电路设计[J].半导体学报,2007,28(2):182-188. |
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| 作者姓名： | 张雅聪 陈中建 鲁文高 赵宝瑛 吉利久 |
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| 作者单位： | 北京大学微电子研究院,北京,100871;北京大学微电子研究院,北京,100871;北京大学微电子研究院,北京,100871;北京大学微电子研究院,北京,100871;北京大学微电子研究院,北京,100871 |
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| 摘 要： | 提出了新型的应用于粒子探测器CMOS读出电路中的电荷灵敏放大器和CR-(RC)n半高斯整形器的结构.电荷灵敏放大器采用多晶硅电阻做反馈来减小噪声,仿真发现与传统结构相比,在探测器电容高达150pF时,输入等效噪声电荷数由5036个电子减小到2381个,代价是输出摆幅减小了0.5V.在整形器中,MOS管电阻与多晶硅电阻串联,通过调节MOS管的栅压来改变阻值,以补偿工艺的偏差,在不明显降低线性度的情况下保证了时间常数能够比较精确控制.
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| 关 键 词： | 电荷灵敏放大器 整形器 读出电路 噪声优化 |
| 文章编号： | 0253-4177(2007)02-0182-07 |
| 收稿时间： | 7/19/2006 1:25:14 PM |
| 修稿时间： | 8/31/2006 8:50:10 PM |
A Fully Integrated CMOS Readout Circuit for Particle Detectors |
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| Zhang Yacong,Chen Zhongjian,Lu Wengao,Zhao Baoying and Ji Lijiu.A Fully Integrated CMOS Readout Circuit for Particle Detectors[J].Chinese Journal of Semiconductors,2007,28(2):182-188. |
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| Authors: | Zhang Yacong Chen Zhongjian Lu Wengao Zhao Baoying and Ji Lijiu |
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| Affiliation: | Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China |
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| Abstract: | Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented.The CSA is designed with poly-resistors as feedback components to reduce noise.Compared with conventional CSA,the input referred equivalent noise charge(ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss.The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction. |
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| Keywords: | charge sensitive amplifier shaper readout circuit noise optimization |
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