| 一种提高垂直腔面发射激光器性能的新工艺 |
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| 引用本文： | 郝永芹,钟景昌,谢浩锐,姜晓光,赵英杰,王立军.一种提高垂直腔面发射激光器性能的新工艺[J].半导体学报,2005,26(12). |
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| 作者姓名： | 郝永芹 钟景昌 谢浩锐 姜晓光 赵英杰 王立军 |
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| 作者单位： | 1. 长春理工大学高功率半导体激光国家重点实验室,长春,130022
2. 长春光学精密与物理研究所,长春,130033 |
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| 摘 要： | 采用一种新的工艺方法提高了垂直腔面发射激光器的输出功率.采用开环分布孔代替环形沟槽,使器件的输出功率提高了0.34倍.14μm孔径的器件输出功率超过10mW,工作电流为29.6mA时,最大输出功率达到12.48mW.而且,这些开环分布孔为电注入提供了便捷的桥通道,很好地解决了电极易过沟断线问题.器件表现了良好的高温工作特性,当温度高达60℃时输出功率仍可达到8mW.
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| 关 键 词： | 外延生长 激光二极管 量子阱激光器 半导体激光器 垂直腔面发射激光器 |
A New Process for Improving Performance of VCSELs |
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| Hao Yongqin,Zhong Jingchang,Xie Haorui,Jiang Xiaoguang,Zhao Yingjie,Wang Lijun.A New Process for Improving Performance of VCSELs[J].Chinese Journal of Semiconductors,2005,26(12). |
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| Authors: | Hao Yongqin Zhong Jingchang Xie Haorui Jiang Xiaoguang Zhao Yingjie Wang Lijun |
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| Abstract: | A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers (VCSELs). The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection, so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench,and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃. |
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| Keywords: | epitaxial growth laser diode quantum-well laser semiconductor laser vertical-cavity surface-emitting laser |
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