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一种新型高发射效率的阳极短路IGBT
引用本文:陈伟中,张波,李泽宏,任敏,李肇基. 一种新型高发射效率的阳极短路IGBT[J]. 半导体学报, 2012, 33(11): 114003-4
作者姓名:陈伟中  张波  李泽宏  任敏  李肇基
作者单位:State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
基金项目:国家自然科学基金60806025 国家自然科学基金 61076082
摘    要:提出了一种新型的双发射短接的阳极短路IGBT结构,该结构有两个空穴放射区和二氧化硅阻挡层。首先,第二发射区可以增加空穴的发射效率同时阻止电子直接流向金属,增加了阳极上的电阻和电压,有效的抑制了负阻效应;另一方面,二氧化硅阻挡层使得大量电子聚集在阳极区附近,进一步降低了导通压降。结果表明:相对于传统NPT IGBT, NPN-IGBT和阳极短路IGBT,导通压降分别降低了10%, 17%, 30%。另外,这种阳极短路结构由于有一个电子通道,在关断过程中可以像阳极短路结构一样抽取过剩载流子,使得其关断时间很短,在同样的导通压降下关断,相对于传统NPT IGBT,NPN-IGBT和阳极短路IGBT,关断损耗分别降低了43.7%, 32%, 28%。这种新结构最终实现了导通压降和关断损耗之间很好的折中。

关 键 词:IGBT  发光效率  绝缘栅双极型晶体管  电流密度  NPT  焦耳  发射器  结构

A new short-anoded IGBT with high emission efficiency
Chen Weizhong,Zhang Bo,Li Zehong,Ren Min and Li Zhaoji. A new short-anoded IGBT with high emission efficiency[J]. Chinese Journal of Semiconductors, 2012, 33(11): 114003-4
Authors:Chen Weizhong  Zhang Bo  Li Zehong  Ren Min  Li Zhaoji
Affiliation:State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract:A novel short-anoded insulated-gate bipolar transistor (SA-IGBT) with double emitters is proposed. At the on-state, the new structure shows extraordinarily high emission efficiency. Moreover, with a short-contacted anode, it further enhances the hole emission efficiency because of the crowding of the electrons. The forward voltage drop VF of this structure is 1.74 V at a current density 100 of A/cm2. Compared to the conventional NPT IGBT (1.94 V), segment-anode IGBT (SA-NPN 2.1 V), and conventional SA-IGBT (2.33 V), VF decreased by 10%, 17% and 30%, respectively. Furthermore, no NDR has been detected comparing to the SA-IGBT. At the off-state, there is a channel for extracting excessive carriers in the drift region. The turn-off loss Eoff of this proposed structure is 8.64 mJ/cm2. Compared to the conventional NPT IGBT (15.3 mJ/cm2), SA-NPN IGBT (12.8 mJ/cm2), and SA-IGBT (12.1 mJ/cm2), Eoff decreased by 43.7%, 32% and 28%, respectively.
Keywords:short-anode insulated-gate bipolar transistor  snapback  turn-off  tradeoff
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