| 一种新型高发射效率的阳极短路IGBT |
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| 引用本文： | 陈伟中,张波,李泽宏,任敏,李肇基. 一种新型高发射效率的阳极短路IGBT[J]. 半导体学报, 2012, 33(11): 114003-4 |
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| 作者姓名： | 陈伟中 张波 李泽宏 任敏 李肇基 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| 基金项目： | 国家自然科学基金60806025 国家自然科学基金 61076082 |
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| 摘 要： | 提出了一种新型的双发射短接的阳极短路IGBT结构,该结构有两个空穴放射区和二氧化硅阻挡层。首先,第二发射区可以增加空穴的发射效率同时阻止电子直接流向金属,增加了阳极上的电阻和电压,有效的抑制了负阻效应；另一方面,二氧化硅阻挡层使得大量电子聚集在阳极区附近,进一步降低了导通压降。结果表明：相对于传统NPT IGBT, NPN-IGBT和阳极短路IGBT,导通压降分别降低了10%, 17%, 30%。另外,这种阳极短路结构由于有一个电子通道,在关断过程中可以像阳极短路结构一样抽取过剩载流子,使得其关断时间很短,在同样的导通压降下关断,相对于传统NPT IGBT,NPN-IGBT和阳极短路IGBT,关断损耗分别降低了43.7%, 32%, 28%。这种新结构最终实现了导通压降和关断损耗之间很好的折中。
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| 关 键 词： | IGBT 发光效率 绝缘栅双极型晶体管 电流密度 NPT 焦耳 发射器 结构 |
A new short-anoded IGBT with high emission efficiency |
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| Chen Weizhong,Zhang Bo,Li Zehong,Ren Min and Li Zhaoji. A new short-anoded IGBT with high emission efficiency[J]. Chinese Journal of Semiconductors, 2012, 33(11): 114003-4 |
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| Authors: | Chen Weizhong Zhang Bo Li Zehong Ren Min Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A novel short-anoded insulated-gate bipolar transistor (SA-IGBT) with double emitters is proposed. At the on-state, the new structure shows extraordinarily high emission efficiency. Moreover, with a short-contacted anode, it further enhances the hole emission efficiency because of the crowding of the electrons. The forward voltage drop VF of this structure is 1.74 V at a current density 100 of A/cm2. Compared to the conventional NPT IGBT (1.94 V), segment-anode IGBT (SA-NPN 2.1 V), and conventional SA-IGBT (2.33 V), VF decreased by 10%, 17% and 30%, respectively. Furthermore, no NDR has been detected comparing to the SA-IGBT. At the off-state, there is a channel for extracting excessive carriers in the drift region. The turn-off loss Eoff of this proposed structure is 8.64 mJ/cm2. Compared to the conventional NPT IGBT (15.3 mJ/cm2), SA-NPN IGBT (12.8 mJ/cm2), and SA-IGBT (12.1 mJ/cm2), Eoff decreased by 43.7%, 32% and 28%, respectively. |
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| Keywords: | short-anode insulated-gate bipolar transistor snapback turn-off tradeoff |
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