GaInAs/AlGaAs应变量子阱结构的荧光特性

本文报道了4—300K温度范围内量子阱宽度分别为20、40、90和130A的GaInAs/AlGaAs应变量子阱结构的光荧光特性。我们考虑量子尺寸对载流子子能带的影响和弹性应变引起带隙的移动,计算了量子阱中本征激子发光的能量位置,计算值与实验结果基本吻合。还研究了荧光峰强度随阱宽的变化以及不同温度下荧光峰的半高宽度。

Photoluminescence of Strained GaInAs/AlGaAs Quantum Well Structure

Photoluminescence in the temperature range of 4-300 K from a strained GaInAs/AlGaAsquantum well structure sample with well width of 20, 40, 90 and 130 A, respectively, is reported.Taking both the effect of the quantum size on subband energies of the caarriers and theenergy band-gap shifts with elastic strain into account,excitonic transition energies betweenn=1 electron state and heavy hole state in quantun wells are calculated. The calculated dataare.basically in agreement with the experimental results.The dependence of the photoluminescenceintensity on the width of the quantum wells and the full width at half maximum(FWHM) of the emission peaks at different temperatures have also been studied.