| InAs量子点双区共腔双稳激光器 |
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| 引用本文： | 姜立稳,叶小玲,周晓龙,金鹏,吕雪芹,王占国.InAs量子点双区共腔双稳激光器[J].半导体学报,2010,31(11):114012-3. |
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| 作者姓名： | 姜立稳 叶小玲 周晓龙 金鹏 吕雪芹 王占国 |
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| 摘 要： | 本文介绍了一种新型的双区结构的InAs量子点激光器，实现了波长1.24μm室温连续激射，同时在对可饱和吸收区施加反向偏压或开路的条件下观察到了明显的光学双稳现象，其回滞宽度优于已知所报道的结果。此外，还发现减小反向偏压或增大吸收区长度能有效增加回滞宽度。应用一个改进的阈值电流模型，揭示了可饱和吸收区内量子点吸收和电吸收两种机制对光学双稳的影响，并对所观察到的实验结果进行了解释。
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| 关 键 词： | 量子点激光器 InAs量子点 光学双稳态 饱和吸收器 饱和吸收体 稳态操作 偏置电压 电流模型 |
Optical bistability in a two-section InAs quantum-dot laser |
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| Jiang Liwen,Ye Xiaoling,Zhou Xiaolong,Jin Peng,Lu Xueqin,Wang Zhanguo.Optical bistability in a two-section InAs quantum-dot laser[J].Chinese Journal of Semiconductors,2010,31(11):114012-3. |
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| Authors: | Jiang Liwen Ye Xiaoling Zhou Xiaolong Jin Peng Lu Xueqin Wang Zhanguo |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | |
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| Keywords: | Absorption saturation optical bistability quantum-dot lasers saturable absorber |
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