| X波段GaN HEMT内匹配器件 |
| |
| 引用本文： | 王勇,李静强,张志国,冯震,宋建博,冯志红,蔡树军,杨克武.X波段GaN HEMT内匹配器件[J].半导体学报,2008,29(9):1783-1785. |
| |
| 作者姓名： | 王勇 李静强 张志国 冯震 宋建博 冯志红 蔡树军 杨克武 |
| |
| 作者单位： | 专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051;专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051;专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051;专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051;专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051;专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051;专用集成电路国家重点实验室,石家庄,050051;中国电了科技集团公司第十三研究所,石家庄,050051 |
| |
| 基金项目： | 国家基础研究重大项目基金 |
| |
| 摘 要： | 自主研制的GaN HEMT，栅源泄漏电流从1E-4A量级减小到了1E-6A量级，有效提高了栅漏击穿电压，改善了器件工作特性. 采用MIS结构制作了2.5mm栅宽GaN HEMT，测试频率为8GHz，漏源电压为33V时，器件连续波输出功率为18.2W，功率增益为7.6dB，峰值功率附加效率为43.0%. 2.5mm×4 GaN HEMT内匹配器件，测试频率8GHz，连续波输出功率64.5W，功率增益7.2dB，功率附加效率39%.
|
| 关 键 词： | GaN HEMT 内匹配 输出功率 功率增益 功率附加效率 |
| 收稿时间： | 3/13/2008 2:54:47 PM |
| 修稿时间： | 5/5/2008 8:35:28 AM |
X-Band Internally-Matched GaN HEMTs |
| |
| Wang Yong,Li Jingqiang,Zhang Zhiguo,Feng Zhen,Song Jianbo,Feng Zhihong,Cai Shujun and Yang Kewu.X-Band Internally-Matched GaN HEMTs[J].Chinese Journal of Semiconductors,2008,29(9):1783-1785. |
| |
| Authors: | Wang Yong Li Jingqiang Zhang Zhiguo Feng Zhen Song Jianbo Feng Zhihong Cai Shujun and Yang Kewu |
| |
| Affiliation: | National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;School of Microelectronics,Xidian University,Xi'an 710071,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of ASIC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China |
| |
| Abstract: | With a self-developed GaN HEMT,the magnitude of leakage current between gate and drain is reduced to 1E-6A,the breakdown voltage is increased effectively,and the operating characteristic is improved.An MIS-GaN HEMT with 2.5mm gate-width is fabricated.When the operation voltage is 33V,the resultant device delivers a saturation output power of 18.2W,a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW.The internally-matched GaN HEMTs with a total gate-width of 2.5mm×4 deliver a saturation output power of 64.5W,a power gain of 7.2dB,and a power added efficiency of 39% at a frequency of 8GHz CW. |
| |
| Keywords: | GaN HEMT internal matching output power power gain power added efficiency |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
