部分耗尽SOI MOSFETs中沟道的非对称掺杂效应

利用二维模拟软件对部分耗尽SoI器件中的非对称掺杂沟道效应进行了模拟.详细地研究了该结构器件的电学性能,如输出特性,击穿特性.通过本文模拟发现部分耗尽SOI非对称掺杂沟道相比传统的部分耗尽SOI,能抑制浮体效应,改善器件的击穿特性.同时跟已有的全耗尽SOI非对称掺杂器件相比,部分耗尽器件性能随参数变化,在工业应用上具有可预见性和可操作性.因为全耗尽器件具有非常薄的硅膜,而这将引起如前栅极跟背栅极的耦合效应和热电子退化等寄生效应.

Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs

Asymmetric doping channel (AC) partially depleted (PD) silicon-on-insulator (SOI) devices are simulated using two-dimensional simulation software.The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail.Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices.Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications.The AC FD SOI device has thinner silicon film,which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.