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A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate |
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| Authors: | Liu Bo Feng Zhihong Zhang Sen Dun Shaobo Yin Jiayun Li Jia Wang Jingjing Zhang Xiaowei Fang Yulong Cai Shujun Science Technology on ASIC Laboratory Hebei Semiconductor Research Institute Shijiazhuang China School of Materials Science Engineering Harbin Institute of Technology Harbin China |
| Affiliation: | Liu Bo1,Feng Zhihong(1),Zhang Sen2,Dun Shaobo1,Yin Jiayun1,Li Jia1,Wang Jingjing1,Zhang Xiaowei1,Fang Yulong1,and Cai Shujun1 1 Science and Technology on ASIC Laboratory,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China 2 School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China |
| Abstract: | |
| Keywords: | InAlN/GaN HEMT output power density metal-organic chemical vapor deposition |
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