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Pb(Zr_(0.52)Ti_(0.48))O_3 memory capacitor on Si with a polycrystalline silicon/SiO_2 stacked buffer layer |
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| Authors: | Cai Daolin Li Ping Zhai Yahong Song Zhitang Chen Houpeng |
| Affiliation: | 1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China 3. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro |
| Abstract: | Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been deposited on a p-type Si substrate separated by a polycrystalline silicon/SiO2 stacked buffer layer.The X-ray diffraction peaks of the PZT thin films prepared on the polycrystalline silicon annealed at different temperatures were measured.In addition,the polarization of the Pt/PZT/polycrystalline silicon capacitor has been investigated.The memory capacitor of the metal/ferroelectric/polycrystalline silicon/SiO2/semiconductor structure annealed at 650 ℃ exhibits a clockwise capacitance-voltage hysteresis loop due to the ferroelectric polarization of the PZT thin film.The memory window increases with increasing the area coupling ratio between the SiO2 capacitor and the PZT capacitor. |
| Keywords: | capacitor thin film memory |
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