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氟处理增强型InAlN/GaN HEMT直流和射频特性分析
引用本文:宋旭波,顾国栋,敦少博,吕元杰,韩婷婷,王元刚,徐鹏,冯志红.氟处理增强型InAlN/GaN HEMT直流和射频特性分析[J].半导体学报,2014,35(4):044002-4.
作者姓名:宋旭波  顾国栋  敦少博  吕元杰  韩婷婷  王元刚  徐鹏  冯志红
摘    要:报道了使用氟处理的方法制备的InAlN/GaN 增强型器件。 器件的阈值电压为0.86V。 在VGS=0 V ,VDS=5 V下得到器件跨导为0mS, 表现出了完全的关态特性。氟处理之后器件的栅漏电得到了降低。0.3μm栅长器件的电流截至频率(fT)与最大振荡频率(fMAX)分别为29.4GHz和36.7GHz。建立了器件的小信号模型用来描述器件本征与寄生参量。

关 键 词:增强型  InAlN/GaN  高电子迁移率晶体管  阈值电压  氟处理  小信号模型

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment
Song Xubo,Gu Guodong,Dun Shaobo,L&#; Yuanjie,Han Tingting,Wang Yuangang,Xu Peng and Feng Zhihong.DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment[J].Chinese Journal of Semiconductors,2014,35(4):044002-4.
Authors:Song Xubo  Gu Guodong  Dun Shaobo  L&#; Yuanjie  Han Tingting  Wang Yuangang  Xu Peng and Feng Zhihong
Affiliation:National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Abstract:
Keywords:enhancement-mode  InAlN/GaN HEMT  threshold voltage  fluorine treatment  small-signal model
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