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AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application
作者姓名:王冲  何云龙  郑雪峰  郝跃  马晓华  张进城
作者单位:Key Laboratory of Wide Band gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University
基金项目:Project supported by the National Key Science & Technology Special Project,China(No.2008ZX01002-002);the Major Program and State Key Program of National Natural Science Foundation of China(Nos.60890191,60736033);the Fundamental Research Funds for the Central Universities,China(Nos.K50510250003,K50510250006)
摘    要:正AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_(max) of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.

关 键 词:high electron mobility transistors  AlGaN/GaN  V-gate recess
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