| 激光定位深亚微米CMOS SRAM单粒子翻转敏感区 |
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| 引用本文： | 余永涛,封国强,陈睿,韩建伟.激光定位深亚微米CMOS SRAM单粒子翻转敏感区[J].半导体学报,2014,35(6):064011-4. |
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| 作者姓名： | 余永涛 封国强 陈睿 韩建伟 |
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| 基金项目： | 基础科研计划资助项目(NO.A1320110028),中国科学院支撑技术资助项目(NO.110161501038) |
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| 摘 要： | The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18/zm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device.
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| 关 键 词： | 深亚微米CMOS SRAM单元 脉冲激光 SEU 敏感性 映射 深亚微米技术 显微照片 |
Laser SEU sensitivity mapping of deep submicron CMOS SRAM |
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| Yu Yongtao,Feng Guoqiang,Chen Rui and Han Jianwei.Laser SEU sensitivity mapping of deep submicron CMOS SRAM[J].Chinese Journal of Semiconductors,2014,35(6):064011-4. |
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| Authors: | Yu Yongtao Feng Guoqiang Chen Rui and Han Jianwei |
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| Affiliation: | Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China;University of Chinese Academy of Sciences, Beijing 100049, China;Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China;Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China;Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | single event upset （SEU） sensitivity mapping SRAM cell pulsed laser |
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| Keywords: | single event upset (SEU) sensitivity mapping SRAM cell pulsed laser |
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