| 超薄SiO2软击穿后I-V特性的饱和性质 |
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| 引用本文： | 许铭真,谭长华,段小蓉.超薄SiO2软击穿后I-V特性的饱和性质[J].半导体学报,2006,27(13):193-196. |
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| 作者姓名： | 许铭真 谭长华 段小蓉 |
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| 作者单位： | 北京大学微电子研究院，北京 100871;北京大学微电子研究院，北京 100871;北京大学微电子研究院，北京 100871 |
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| 摘 要： | 利用电子速度饱和概念和比例差值方法（proportional difference operator, PDO）研究了超薄SiO2在第一次软击穿以后栅电流随着栅电压的变化所呈现的饱和性质. 实验证明了第一次软击穿以后栅电流随着栅电压变化的PDO谱峰位、峰高与电子在第一次软击穿通道中运动的饱和速度及饱和电流密度相关. 基于缺陷散射机制，得到的第一次软击穿通道的横截面积与文献报导的结果一致.
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| 关 键 词： | 超薄SiO2 软击穿 I-V饱和特性 |
Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown |
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| Xu Mingzhen,Tan Changhua and Duan Xiaorong.Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown[J].Chinese Journal of Semiconductors,2006,27(13):193-196. |
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| Authors: | Xu Mingzhen Tan Changhua and Duan Xiaorong |
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| Affiliation: | Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China;Institute of Microelectronics,Peking University,Beijing 100871,China |
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| Abstract: | The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxides is discussed on the basis of electron velocity saturation concept.The post soft breakdown current-voltage (I-V) characteristic is studied with the proportional difference operator (PDO) method.It is shown that the proportional difference of the soft breakdown I-V curve is a peak function.Its peak position and height are related to the saturation velocity of electron in SBD path and the saturation current density through the SBD path,respectively.In addition a simple and useful method of defining and characterizing the SBD path cross-section in SiO2 based on the defect scattering mechanism is also presented. |
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| Keywords: | ultrathin SiO2 soft breakdown I-V saturation characteristics |
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