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Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures
Authors:Duan Huantao  Hao Yue  Zhang Jincheng
Affiliation:Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract:metal-organic vaporphase epitaxy aluminum nitride gallium nitride AlGaN/GaN heterostructures
Keywords:metal-organic vaporphase epitaxy  aluminum nitride  gallium nitride  AlGaN/GaN heterostructures
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