| Hg_(1-x)Cd_xTe反型层子能带结构的实验研究 |
| |
| 引用本文： | 褚君浩,R.Sizmann,F.Koch,J.Ziegler,H.Maier.Hg_(1-x)Cd_xTe反型层子能带结构的实验研究[J].半导体学报,1990,11(5):332-340. |
| |
| 作者姓名： | 褚君浩 R.Sizmann F.Koch J.Ziegler H.Maier |
| |
| 作者单位： | 中国科学院上海技术物理研究所国家红外物理实验室，Physik-Department E-16，T.U.Munchen.8046 Garching，F.R.G.，Physik-Department E-16，T.U.Munchen.8046 Garching，F.R.G.，AEG 7100 Heilbronn，F.R. G.，AEG 7100 Heilbronn，F.R. G. 上海 Physik-Department E-16，T.U.Munchen.8046 Garching，F.R.G. |
| |
| 摘 要： | 本文在4.2K下测定了液相外延HgCdTe MIS结构样品的电容谱,磁阻振荡以及迴旋共振效应,并从实验测量结果,采用物理参数拟合法,确定了该样品在电量子限条件下反型层电子子能带结构,包括基态子能带能量E_o、费密能级E_F,子能带电子有效质量m~*(E_F)、m~*(E_o)、反型层平均厚度Z_i、耗尽层厚度Z_d,以及它们随子能带电子浓度N_s的变化。
|
| 关 键 词： | HgCdTe 能带结构 反型层子 实验 |
Experimental Study of Inversion Layer Subband Structure on HgCdTe |
| |
| Junhao Chu/National Laboratory for Infrared Physics.Experimental Study of Inversion Layer Subband Structure on HgCdTe[J].Chinese Journal of Semiconductors,1990,11(5):332-340. |
| |
| Authors: | Junhao Chu/National Laboratory for Infrared Physics |
| |
| Affiliation: | Junhao Chu/National Laboratory for Infrared Physics Shanghai Institute of Technical Physics,Academia Sinica,Physik-Department E-16 T. U. Manchen,D-8046 Garching,FRG
R.Sizmann/Physik-Department E-16 T. U. Manchen,D-8046 Garching,FRG
F,Koch/Physik-Department E-16 T. U. Manchen,D-8046 Garching,FRG
J. Ziegle/AEG,D-7100 Heilbron,FRG
H. Maier/AEG,D-7100 Heilbron,FRG |
| |
| Abstract: | The measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotronresonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, andthe inversion layer electron concentration N_3 dependent subband structures including subbandenergy E_0, Fermi energy E_f, effective mass M~*, average depth of inversion layer Z_0 anddepletion layer depth Z_d in the electric quantum limit are determined quantitatively from theexperimental measurements by using the physical parameter fitting method (PPFM). |
| |
| Keywords: | 2 DEG Subband HgCdTe Surface Interface |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
