| 基于低温缓冲层的单片集成长波长可调谐光探测器 |
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| 引用本文： | 吕吉贺,黄辉,任晓敏,苗昂,李轶群,王睿,黄永清,王琦. 基于低温缓冲层的单片集成长波长可调谐光探测器[J]. 半导体学报, 2007, 28(11): 1807-1810 |
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| 作者姓名： | 吕吉贺 黄辉 任晓敏 苗昂 李轶群 王睿 黄永清 王琦 |
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| 作者单位： | 北京邮电大学,光通信与光波技术教育部重点实验室,北京,100876 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金，国家高技术研究发展计划(863计划) |
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| 摘 要： | 实现了一种单片集成的长波长可调谐光探测器.通过外延实验,摸索出低温缓冲层的最佳生长条件,成功地在GaAs衬底上生长出晶格失配度约4%的高质量的InP基材料.基于此低温缓冲层,在GaAs衬底上首先生长GaAs/AlAs材料的F-P腔滤波器,然后异质外延InP-In0.53 Ga0.47 As-InP材料的PIN结构.制作出的器件通过热调谐,峰值波长从1533.1nm红移到1543.1nm,实现了10.0nm的调谐范围,同时响应线宽维持在0.8nm以下,量子效率保持在23%以上,响应速率达到6.2GHz.
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| 关 键 词： | 异质外延 可调谐 光电探测器 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-06-21 |
A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer |
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| Lü Jihe, Huang Hui, Ren Xiaomin, Miao Ang, Li Yiqun, Wang Rui, Huang Yongqing, Wang Qi. A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer[J]. Journal of Semiconductors, 2007, In Press. Lü J, Huang H, Ren X M, Miao A, Li Y Q, Wang R, Huang Y Q, Wang Q. A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer[J]. Chin. J. Semicond., 2007, 28(11): 1807.Export: BibTex EndNote |
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| Authors: | Lü Jihe Huang Hui Ren Xiaomin Miao Ang Li Yiqun Wang Rui Huang Yongqing Wang Qi |
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| Affiliation: | Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication and Lightwave Technologies of MEC,Beijing University of Posts and Telecommunications,Beijing 100876,China |
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| Abstract: | We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.53Ga0.47-As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure.High quality heteroepitaxy is realized by employing a thin low-temperature buffer layer,which is carried out in a series of experiments.A wavelength tuning range of 10.0nm,an external quantum efficiency of about 23%,a spectral linewidth of 0.8nm,and a 3dB bandwidth of 6.2GHz are simultaneously obtained in the device. |
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| Keywords: | heteroepitaxy tunable photodetector |
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