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GSMBE-Grown InGaAs/InGaAsP Strained Quantum Well Lasers at 1.84 Micron Wavelength |
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| Abstract: | GSMBE-grown 1.84 micron wavelength InGaAs/InGaAsP/InP strainedquantum well lasers are reported. Lasers with 800 micron-long cavity and 40 micron-wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3.8kA/cm2 and the external different quantum efficiency is 9.3%. |
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