| 离子损伤对等离子体辅助分子束外延生长的GaNAs／GaAs和GaInNAs／GaAs量子阱的影响 |
| |
| 引用本文： | 李联合,潘钟,张伟,林耀望,王学宇,吴荣汉.离子损伤对等离子体辅助分子束外延生长的GaNAs／GaAs和GaInNAs／GaAs量子阱的影响[J].半导体学报,2001,22(1). |
| |
| 作者姓名： | 李联合 潘钟 张伟 林耀望 王学宇 吴荣汉 |
| |
| 作者单位： | 中国科学院半导体研究所 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
| |
| 摘 要： | 研究了离子损伤对等离子体辅助分子束外延生长的GaNAs／GaAs和GaInNAs／GaAs量子阱的影响．研究表明离子损伤是影响GaNAs和GaInNAs量子阱质量的关键因素．去离子磁场能有效地去除了等离子体活化产生的氮离子．对于使用去离子磁场生长的GaNAs和GaInNAs量子阱样品，X射线衍射测量和PL谱测量都表明样品的质量被显著地提高．GaInAs量子阱的PL强度已经提高到可以和同样条件下生长的GaInAs量子阱相比较．研究也表明使用的磁场强度越强，样品的光学质量提高越明显．
|
| 关 键 词： | Ga(In)NAs 分子束外延(MBE) 离子损伤 X射线衍射 光致发光 |
Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage |
| |
| LI Lian-he,PAN Zhong,ZHANG Wei,LIN Yao-wang,WANG Xue-yu,WU Rong-han.Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage[J].Chinese Journal of Semiconductors,2001,22(1). |
| |
| Authors: | LI Lian-he PAN Zhong ZHANG Wei LIN Yao-wang WANG Xue-yu WU Rong-han |
| |
| Abstract: | The effects of ion damage on GaNAs/GaAs and GaInNAs/GaAs quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy have been investigated.It is found that ion damage is a key factor affecting the quality of GaNAs and GaInNAs QWs.Obvious appearance of pendello¨sung fringes in X-ray diffraction pattern and remarkable improvement in the optical properties of the samples grown with ion removal magnets are observed.By removing nitrogen ions,the PL intensity of the GaInNAs QW is improved so as to be comparable with that of GaInAs QW.The stronger is the magnetic field,the more obvious the PL intensity improvement would be. |
| |
| Keywords: | |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
