HfO_2高k栅介质漏电流机制和SILC效应

利用室温下反应磁控溅射的方法在 p- Si(1 0 0 )衬底上制备了 Hf O2 栅介质层 ,研究了 Hf O2 高 k栅介质的电流传输机制和应力引起泄漏电流 (SIL C)效应 .对 Hf O2 栅介质泄漏电流输运机制的分析表明 ,在电子由衬底注入的情况下 ,泄漏电流主要由 Schottky发射机制引起 ,而在电子由栅注入的情况下 ,泄漏电流由 Schottky发射和 Frenkel-Poole发射两种机制共同引起 .通过对 SIL C的分析 ,在没有加应力前 Hf O2 / Si界面层存在较少的界面陷阱 ,而加上负的栅压应力后在界面处会产生新的界面陷阱 ,随着新产生界面陷阱的增多 ,这时在衬底注入的情况下 ,电流传

Characteristics of Leakage Current Mechanisms and SILC Effects of HfO2 Gate Dielectric

HfO 2 gate dielectric thin films are deposited on p Si(100) substrates by the method of reacting magnetron sputtering and furnace annealing.Analysis of leakage current conduction mechanisms of HfO 2 gate dielectric films shows that the leakage is induced mainly by Schottky emission mechanism for substrate electron injection,while both Schottky emission and Frenkel Poole emission mechanism may contribute to the leakage current for gate electron injection.As to SILC,in the fresh devices there exist few interfacial traps at HfO 2/Si interface.However,negative gate bias stress can cause the generation of new interfacial traps at HfO 2/Si interface.With the increase of new interfacial traps,the leakage current conduction mechanisms of HfO 2 gate dielectric films are induced by not only Schottky emission but also Frenkel Poole emission .It also can be found that area dependence of SILC effects is very small.