高k栅介质MOSFETs的二维阈值电压模型

给出包括栅电介质与耗尽层区域的边界条件和二维沟道电势分布.根据这个电势分布,得出高k栅介质MOSFET的阈值电压模型,模型中考虑短沟道效应和高k栅介质的边缘场效应.模型模拟结果和实验结果能够很好地符合.通过和一个准二维模型的结果相比较,表明该模型更准确.另外,还详细讨论了影响高k栅电介质MOSFET阈值电压的一些因素.

2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs

New boundary conditions and a 2D potential distribution along the channel of a high-k gate-dielectric MOSFET,including both the gate dielectric material region and the depletion region,are given. Based on this distribution, a 2D threshold-voltage model with thefringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET. The model agrees well with experimental data and a quasi 2D model, and is even more accurate than the quasi 2D model at higher drain voltages. Factors affecting the threshold behavior of the high-k gate-dielectric MOSFET are discussed in detail.