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非均匀金属线宽和线间距射频螺旋电感品质因子的改善
引用本文:沈珮,张万荣,黄璐,金冬月,谢红云.非均匀金属线宽和线间距射频螺旋电感品质因子的改善[J].半导体学报,2011,32(6):064011-5.
作者姓名:沈珮  张万荣  黄璐  金冬月  谢红云
作者单位:北京工业大学
基金项目:国家自然科学基金(60776051,60376033)
摘    要:为了提高品质因子Q,本文提出了一种非均匀金属条宽和非均匀条间距的改进电感结构。从外圈到里圈,改进的电感金属线宽按等差数列逐渐减小,金属间距按等比数列增加。因为该渐变结构有效减弱了线圈中心电流拥挤导致的涡流效应,所以改进结构电感的Q因子大幅度提高(幅值高达42.86%)。为了进一步增大Q因子,新型电感同时采用图形化接地保护结构(PGS)与渐变结构。结果显示,在0.5GHz到16GHz的射频频段内,结合两种技术的新型电感的品质因子Q最优,与固定金属线宽和间距的传统电感相比,Q提高了67%;与仅采纳PGS结构的电感相比,Q提高了23%;与仅采用渐变金属结构的电感相比,Q提高了20%。

关 键 词:电感布局优化  渐变的金属线宽和线间距  集成射频电感  硅衬底

Improving the quality factor of an RF spiral inductor with non-uniform metal width and non-uniform coil spacing
Shen Pei,Zhang Wanrong,Huang Lu,Jin Dongyue and Xie Hongyun.Improving the quality factor of an RF spiral inductor with non-uniform metal width and non-uniform coil spacing[J].Chinese Journal of Semiconductors,2011,32(6):064011-5.
Authors:Shen Pei  Zhang Wanrong  Huang Lu  Jin Dongyue and Xie Hongyun
Affiliation:School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China; Alabama Microelectronics Science and Technology Center, Electronic and Computer Engineering Department, Auburn University, Auburn, AL 36849,;School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China;School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China;School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China;School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
Abstract:An improved inductor layout with non-uniform metal width and non-uniform spacing is proposed to increase the quality factor (Q factor). For this inductor layout, from outer coil to inner coil, the metal width is reduced by an arithmetic-progression step, while the metal spacing is increased by a geometric-progression step. An improved layout with variable width and changed spacing is of benefit to the Q factor of RF spiral inductor improvement (approximately 42.86%), mainly due to the suppression of eddy-current loss by weakening the current crowding effect in the center of the spiral inductor. In order to increase the Q factor further, for the novel inductor, a patterned ground shield is used with optimized layout together. The results indicate that, in the range of 0.5 to 16 GHz, the Q factor of the novel inductor is at an optimum, which improves by 67% more than conventional inductors with uniform geometry dimensions (equal width and equal spacing), is enhanced by nearly 23% more than a PGS inductor with uniform geometry dimensions, and improves by almost 20% more than an inductor with an improved layout.
Keywords:inductor layout optimization  variable metal width and spacing  integrated RF inductor  silicon substrate
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