| 一个适用于极低温的宽温度范围子电路MOSFET模型 |
| |
| 引用本文： | 贾侃,孙伟锋,时龙兴.一个适用于极低温的宽温度范围子电路MOSFET模型[J].半导体学报,2011,32(6):064002-6. |
| |
| 作者姓名： | 贾侃 孙伟锋 时龙兴 |
| |
| 摘 要： | 本文描述了一个适用于低温下的MOSFET子电路SPICE模型。其中引入了两个电阻用于描述冻析效应，并开发了这两个电阻的解析的行为模型。该模型在从极低温到常温的较宽的温度范围内均适用。
|
| 关 键 词： | MOSFET FET模型 温度范围 低温运行 子电路 SPICE模型 行为模型 |
A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature |
| |
| Jia Kan,Sun Weifeng and Shi Longxing.A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature[J].Chinese Journal of Semiconductors,2011,32(6):064002-6. |
| |
| Authors: | Jia Kan Sun Weifeng and Shi Longxing |
| |
| Affiliation: | National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China |
| |
| Abstract: | A sub-circuit SPICE model of a MOSFET for low temperature operation is presented. Two resistors are introduced for the freeze-out effect, and the explicit behavioral models are developed for them. The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures. |
| |
| Keywords: | SPICE model low temperature sub-circuit freeze-out effect voltage control resistor |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
