| 一种新型SiGe-OI脊形光波导的模式分析及结构参数优化 |
| |
| 引用本文： | 冯松,高勇,杨媛,冯玉春.一种新型SiGe-OI脊形光波导的模式分析及结构参数优化[J].半导体学报,2009,30(8):084008-5. |
| |
| 作者姓名： | 冯松 高勇 杨媛 冯玉春 |
| |
| 作者单位： | Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;Key Laboratories of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen 518060, China |
| |
| 基金项目： | 深圳大学省、部重点实验室开放基金 |
| |
| 摘 要： | The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method （BPM） and the experimental results.
|
| 关 键 词： | 硅锗技术 结构参数 参数优化 光波导 肋骨 SiGe技术 光束传播法 软件分析 |
Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide |
| |
| Feng Song,Gao Yong,Yang Yuan and Feng Yuchun.Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide[J].Chinese Journal of Semiconductors,2009,30(8):084008-5. |
| |
| Authors: | Feng Song Gao Yong Yang Yuan and Feng Yuchun |
| |
| Affiliation: | 1 Department of Electronic Engineering;Xi'an University of Technology;Xi'an 710048;China;2 Key Laboratories of Optoelectronic Devices and Systems;Shenzhen University;Shenzhen 518060;China |
| |
| Abstract: | The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structur |
| |
| Keywords: | SiGe-OI rib optical waveguides mode analysis Ge content structure parameters |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
