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As2S8平面波导:退火-光照-退火循环作用下折射率的变化及光传输特性
引用本文:邹林儿,王国日,沈云,陈抱雪,矶守.As2S8平面波导:退火-光照-退火循环作用下折射率的变化及光传输特性[J].半导体学报,2011,32(11):112004-6.
作者姓名:邹林儿  王国日  沈云  陈抱雪  矶守
摘    要:蒸发沉积态的非晶半导体As2S8薄膜在退火-饱和光照-退火循环处理下,其折射率变化存在可逆。而对于在退火-非饱和光照-退火的连续处理,发现As2S8薄膜折射率先增加达到最大值,然后在退火作用下才出现可逆。退火处理引起S-S键态变化,导致非晶半导体As2S8薄膜结构达到一定稳定状态,伴随着薄膜厚度的减小。As2S8平面波导在130C 温度退火,然饱和光照,又经过130C 温度退火处理后,显示出约为0.27 dB/cm低的传输损耗,在波长632.8 nm导模下有良好的光传输性能。

关 键 词:折射率变化  连续退火  平面波导  传播特性  火周期  辐照  非晶半导体薄膜  退火处理
收稿时间:4/23/2011 8:18:39 PM

As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features
Zou Liner,Wang Gouri,Shen Yun,Chen Baoxue and Mamoru Iso.As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features[J].Chinese Journal of Semiconductors,2011,32(11):112004-6.
Authors:Zou Liner  Wang Gouri  Shen Yun  Chen Baoxue and Mamoru Iso
Affiliation:Department of Physics, Nanchang University, Nanchang 330031, China;Department of Physics, Nanchang University, Nanchang 330031, China;Department of Physics, Nanchang University, Nanchang 330031, China;School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;Department of Chemical Engineering, Tokyo University of Agriculture and Technology, Tokyo 184-8588, Japan
Abstract:
Keywords:amorphous semiconductor chalcogenide  As2S8 waveguide  refractive index  light propagation
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