GaN-MOCVD设备反应室流场的CFD数值仿真

采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议.

CFD Simulation of Flow Patterns in GaN-MOCVD Reactor

Computational fluid dynamics (CFD) simulation is performed to study the flow dynamics in the metal-organic chemical vapor deposition(MOCVD) reactor.The numerical code is based on the SIMPLE scheme with the non-stagger grids system.The improved pressure-velocity method by Rhie & Chow is adopted to avoid unreasonable pressure fluctuation.The governing equations are discretized with a finite volume method.CFD simulation gives the flow structures in the planetary MOCVD reactor which has complex geometrical structures and motion style.The effect of the different geometrical size and working parameters on the flow patterns in the MOCVD reactor is studied.The CFD simulation results give constructive suggestion to the configuration design and the parameter optimization of the MOCVD reactor.